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| savantic semiconductor product specification silicon npn power transistors 2SC2085 d escription with to-220 package high breakdown voltage high transition frequency applications for line-operated af amplifier and chrominance output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 5 v i c collector current 0.1 a i cm collector current-peak 0.15 a p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2085 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =100a ;i e =0 300 v v (br)ceo collector-emitter breakdown voltage i c =1ma ;i b =0 300 v v (br)ebo emitter-base breakdown voltage i e =100a ;i c =0 5 v v cesat collector-emitter saturation voltage i c =100ma ;i b =10ma 5.0 v v be base-emitter on voltage i c =50ma ; v ce =10v 1.2 v i ceo collector cut-off current v ce =300v;i b =0 20 a i cbo collector cut-off current v cb =300v;i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =10ma ; v ce =10v 30 h fe -2 dc current gain i c =50ma ; v ce =10v 30 150 c ob output capacitance i e =0; v cb =30v;f=1mhz 8 pf f t transition frequency i c =20ma ; v ce =30v 55 mhz h fe-2 classifications p q r 30-60 50-100 80-150 savantic semiconductor product specification 3 silicon npn power transistors 2SC2085 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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